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Colorless transparent liquid
Melting point:－77℃，
Boiling point: 169℃，
Density: 0.93g/mL。
Stable in water；slight soluble in water and hydrolyze in pure water, hydrolyze more quickly in acids and bases。
Siwin-TEOS electronic grade
78-10-4
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Siwin-TEOS (electronic grade)
Tetraethyl Orthosilicate
Description
Electronic grade tetraethyl orthosilicate (TEOS) is a critical material in semiconductor manufacturing, primarily used in chemical vapor deposition (CVD) processes to form silicon dioxide isolation layers and intermetal dielectric films, ensuring circuit insulation and surface flatness.
Indispensable in integrated circuits (ICs), discrete devices, micro-electromechanical systems (MEMS), and photovoltaic cells.
Performance Requirements
Typical properties
Product No. | Siwin-TEOS (electronic grade) | |||
Chemical Name | Tetraethyl Orthosilicate | |||
CAS NO. | 78-10-4 | |||
Molecular Formula | Si(C2H5O)4 | |||
Molecular Weight | 208.33 | |||
Appearance | Colorless transparent liquid | |||
Melting point | －77℃ | |||
Boiling point | 169℃ | |||
Density | 0.93g/mL | |||
Chromacity | ≤10APHA | |||
Purity | ≥99.99% | |||
Metal content | Mn≤0.1 ppb | Al≤0.2 ppb | Mo≤0.1 ppb | Ag≤0.1 ppb |
Na≤0.5 ppb | As≤0.4 ppb | Nb≤0.1 ppb | Au≤0.1 ppb | |
Ni≤0.2 ppb | B≤0.5 ppb | Pb≤0.1 ppb | Ba≤0.1 ppb | |
Sb≤0.1 ppb | Be≤0.1 ppb | Sn≤0.2 ppb | Bi≤0.1 ppb | |
Sr≤0.1 ppb | Ca≤0.5 ppb | Th≤0.1 ppb | Cd≤0.1 ppb | |
W≤0.1 ppb | Ti≤0.1 ppb | Zn≤0.2 ppb | U≤0.1 ppb | |
V≤0.1 ppb | Co≤0.4 ppb | Cu≤0.2 ppb | Cr≤0.2 ppb | |
Fe≤0.2 ppb | Zr≤0.1 ppb | Ga≤0.4 ppb | Hg≤0.3 ppb | |
K≤0.2 ppb | Li≤0.1 ppb | Mg≤0.5 ppb | ||
Cl content | ≤0.5 ppm | |||
Water content | ≤5 ppm | |||
Ethanol content | ≤3 ppm | |||
Particle content | Particle ≥0.1µm: ≤50p/ml | Particle ≥0.2µm: ≤30p/ml | ||
Particle ≥0.3µm: ≤20p/ml | Particle ≥0.5µm: ≤10p/ml | |||
Particle ≥1.0µm: ≤3p/ml | ||||
Application
Semiconductor Manufacturing
Chemical Vapor Deposition (CVD) Processes:
Used to form silicon dioxide isolation layers and intermetal dielectric films, enhancing circuit insulation and surface flatness while blocking contaminants and impurities from penetrating semiconductor components.
Critical for integrated circuits (ICs) and wafer fabrication, serving as a core material for conductive/insulating layers, anti-reflective coatings (to improve light absorption), and temporary etch stop layers.
MEMS and Discrete Devices
Acts as a key electronic chemical in micro-electromechanical systems (MEMS) and discrete device manufacturing, enabling protective and functional film deposition to ensure device stability and precision.
Photovoltaics
Applied in solar cells to create silicon dioxide films via CVD, optimizing light absorption efficiency and improving weather resistance of components.
Optical and Functional Coatings
Heat/Chemical-Resistant Coatings: Used in anti-corrosion paints, high-temperature-resistant coatings, and precision casting adhesives to enhance material stability in extreme environments.
Optical Processing: Enhances light transmittance of optical glass through surface siliconization; hydrolyzed silica powders are utilized in phosphor manufacturing.
Package & Storage
210L Iron Drum: 190kg/drum.
1000L IBC Container: 900kg/container.
Store tightly at room temperature in dry shadow place, avoid contact with alkali and acid , away from fire source.
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