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Electronic grade Tetraethyl Orthosilicate CAS 78-10-4 for and micro-electromechanical systems (MEMS)

Product Description

Siwin-TEOS (electronic grade)

Tetraethyl Orthosilicate

Description

Electronic grade tetraethyl orthosilicate (TEOS) is a critical material in semiconductor manufacturing, primarily used in ‌chemical vapor deposition (CVD)‌ processes to form silicon dioxide isolation layers and intermetal dielectric films, ensuring circuit insulation and surface flatness‌.

Indispensable in integrated circuits (ICs), discrete devices, micro-electromechanical systems (MEMS), and photovoltaic cells‌.

‌Performance Requirements‌

Typical properties

Product No.	Siwin-TEOS (electronic grade)
Chemical Name	Tetraethyl Orthosilicate
CAS NO.	78-10-4
Molecular Formula	Si(C2H5O)4
Molecular Weight	208.33
Appearance	Colorless transparent liquid
Melting point	－77℃
Boiling point	169℃
Density	0.93g/mL
Chromacity	≤10APHA
Purity	≥99.99%
Metal content	Mn≤0.1 ppb	Al≤0.2 ppb	Mo≤0.1 ppb	Ag≤0.1 ppb
	Na≤0.5 ppb	As≤0.4 ppb	Nb≤0.1 ppb	Au≤0.1 ppb
	Ni≤0.2 ppb	B≤0.5 ppb	Pb≤0.1 ppb	Ba≤0.1 ppb
	Sb≤0.1 ppb	Be≤0.1 ppb	Sn≤0.2 ppb	Bi≤0.1 ppb
	Sr≤0.1 ppb	Ca≤0.5 ppb	Th≤0.1 ppb	Cd≤0.1 ppb
	W≤0.1 ppb	Ti≤0.1 ppb	Zn≤0.2 ppb	U≤0.1 ppb
	V≤0.1 ppb	Co≤0.4 ppb	Cu≤0.2 ppb	Cr≤0.2 ppb
	Fe≤0.2 ppb	Zr≤0.1 ppb	Ga≤0.4 ppb	Hg≤0.3 ppb
	K≤0.2 ppb	Li≤0.1 ppb	Mg≤0.5 ppb
Cl content	≤0.5 ppm
Water content	≤5 ppm
Ethanol content	≤3 ppm
Particle content	Particle ≥0.1µm: ≤50p/ml		Particle ≥0.2µm: ≤30p/ml
	Particle ≥0.3µm: ≤20p/ml		Particle ≥0.5µm: ≤10p/ml
	Particle ≥1.0µm: ≤3p/ml

Application

‌Semiconductor Manufacturing‌

‌Chemical Vapor Deposition (CVD) Processes‌:

Used to form ‌silicon dioxide isolation layers‌ and ‌intermetal dielectric films‌, enhancing circuit insulation and surface flatness while blocking contaminants and impurities from penetrating semiconductor components‌.

Critical for ‌integrated circuits (ICs)‌ and wafer fabrication, serving as a core material for conductive/insulating layers, anti-reflective coatings (to improve light absorption), and temporary etch stop layers‌.

‌MEMS and Discrete Devices‌

Acts as a key electronic chemical in ‌micro-electromechanical systems (MEMS)‌ and discrete device manufacturing, enabling protective and functional film deposition to ensure device stability and precision‌.

‌Photovoltaics‌

Applied in solar cells to create silicon dioxide films via CVD, optimizing light absorption efficiency and improving weather resistance of components‌.

‌Optical and Functional Coatings‌

‌Heat/Chemical-Resistant Coatings‌: Used in anti-corrosion paints, high-temperature-resistant coatings, and precision casting adhesives to enhance material stability in extreme environments‌.

‌Optical Processing‌: Enhances light transmittance of optical glass through surface siliconization; hydrolyzed silica powders are utilized in phosphor manufacturing‌.

Package & Storage

210L Iron Drum: 190kg/drum.

1000L IBC Container: 900kg/container.

Store tightly at room temperature in dry shadow place, avoid contact with alkali and acid , away from fire source.

Electronic grade Tetraethyl Orthosilicate CAS 78-10-4 for and micro-electromechanical systems (MEMS)

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